Two-dimensional Modelling of HEMTs Using Multigrids with Quantum Correction | Zendy

E. A. B. Cole | Zendy; Tobias Boettcher | Zendy; C.M. Snowden | Zendy

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Two-dimensional Modelling of HEMTs Using Multigrids with Quantum Correction

Author(s) -

E. A. B. Cole,

Tobias Boettcher,

C.M. Snowden

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/61608

Subject(s) - isothermal process , high electron mobility transistor , multigrid method , poisson's equation , current density , poisson distribution , current (fluid) , mathematics , layer (electronics) , schrödinger's cat , perpendicular , quantum , mathematical analysis , materials science , condensed matter physics , physics , quantum mechanics , geometry , differential equation , thermodynamics , composite material , transistor , statistics , voltage

The two-dimensional multi-layered HEMT is modelled isothermally by solving thePoisson and current continuity equations consistently with the Schrödinger equation. Amultigrid method is used on the Poisson and current continuity equations while theelectron density is calculated at each level by solving the Schrödinger equation in onedimensionalslices perpendicular to the layer structure. A correction factor is introducedwhich enables relatively accurate solutions to be obtained using a low number ofeigensolutions. A novel method for discretising the current density which can begeneralised to the non-isothermal case is described. Results are illustrated using a twolayer AlGaAs-GaAs HEMT

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