Three‐Dimensional Hydrodynamic Modelingof MOSFET Devices | Zendy

Daniel C. Kerr | Zendy; Neil Goldsman | Zendy; I.D. Mayergoyz | Zendy

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Three‐Dimensional Hydrodynamic Modelingof MOSFET Devices

Author(s) -

Daniel C. Kerr,

Neil Goldsman,

I.D. Mayergoyz

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/60859

Subject(s) - discretization , mosfet , semiconductor device , relaxation (psychology) , mechanics , physics , statistical physics , mathematics , materials science , mathematical analysis , voltage , transistor , quantum mechanics , nanotechnology , psychology , social psychology , layer (electronics)

The hydrodynamic (HD) model of semiconductor devices is solved numerically inthree-dimensions (3-D) for the MOSFET device. The numerical instabilities of the HD modelare analyzed to develop a stable discretization. The formulation is stabilized by using a new,higher-order discretization for the relaxation-time approximation (RTA) term of theenergy-balance (EB) equation. The developed formulation is used to model the MOSFET

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