Open AccessA Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller
Author(s) -
M. Grado-Caffaro
Publication year - 1997
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1998/59494
Subject(s) - eeprom , quantum tunnelling , microcontroller , voltage , current (fluid) , electrical engineering , current density , optoelectronics , materials science , eprom , condensed matter physics , engineering , physics , quantum mechanics
The tunneling current density in a MOS cell for a low-voltage microcontroller based onEEPROM is calculated for high electric strengths. Furthermore, this current density isdiscussed in terms of the oxide thickness and an approximate expression for the velocityof charge carriers is derived
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