Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations | Zendy

R. W. Kelsall | Zendy; A. J. Lidsey | Zendy

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Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations

Author(s) -

R. W. Kelsall,

A. J. Lidsey

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/57936

Subject(s) - monte carlo method , quantum monte carlo , statistical physics , schrödinger equation , physics , hybrid monte carlo , monte carlo molecular modeling , monte carlo method in statistical physics , poisson's equation , dynamic monte carlo method , coupling (piping) , quantum , schrödinger's cat , quantum mechanics , computational physics , mathematics , markov chain monte carlo , materials science , statistics , metallurgy

The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self-consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states. Comparisons between the new model and a standard semi-classical Monte Carlo model are presented for a 0.1 μm gate-length In0.52Al0.48As/In0.53 Ga0.47As/InP MODFET. Whilst the quantum model yields minor corrections in the predicted output characteristics, it is found that these results can be achieved without repeated iterations of the Schrodinger equation

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