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The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self-consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states. Comparisons between the new model and a standard semi-classical Monte Carlo model are presented for a 0.1 μm gate-length In0.52Al0.48As/In0.53 Ga0.47As/InP MODFET. Whilst the quantum model yields minor corrections in the predicted output characteristics, it is found that these results can be achieved without repeated iterations of the Schrodinger equation

Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations