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LDD MOSFET simulation is performed by directly solving the Boltzmann Transport Equationfor electrons, the Hole-Current Continuity Equation and the Poisson Equation self-consistently.The spherical harmonic expansion method is employed along with a newScharfetter-Gummel like discretization of the Boltzmann equation. The solution efficientlyprovides the distribution function, electrostatic potential, and the hole concentration for theentire 2-D MOSFET

A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations