A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations | Zendy

Wenchao Liang | Zendy; Neil Goldsman | Zendy; I.D. Mayergoyz | Zendy

Open Access

A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations

Author(s) -

Wenchao Liang,

Neil Goldsman,

I.D. Mayergoyz

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/57195

Subject(s) - boltzmann equation , poisson's equation , discretization , poisson–boltzmann equation , mosfet , boltzmann constant , convection–diffusion equation , statistical physics , physics , direct simulation monte carlo , distribution function , mathematical analysis , mathematics , mechanics , monte carlo method , quantum mechanics , transistor , dynamic monte carlo method , ion , statistics , voltage

LDD MOSFET simulation is performed by directly solving the Boltzmann Transport Equationfor electrons, the Hole-Current Continuity Equation and the Poisson Equation self-consistently.The spherical harmonic expansion method is employed along with a newScharfetter-Gummel like discretization of the Boltzmann equation. The solution efficientlyprovides the distribution function, electrostatic potential, and the hole concentration for theentire 2-D MOSFET

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