A New Approach based on Brownian Motion for theSimulation of Ultra‐Small Semiconductor Devices | Zendy

Clinton R. Arokianathan | Zendy; Asen Asenov | Zendy; J. H. Davies | Zendy

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A New Approach based on Brownian Motion for theSimulation of Ultra‐Small Semiconductor Devices

Author(s) -

Clinton R. Arokianathan,

Asen Asenov,

J. H. Davies

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/52624

Subject(s) - statistical physics , brownian motion , brownian dynamics , boltzmann equation , monte carlo method , semiconductor device , physics , scale (ratio) , motion (physics) , computer science , classical mechanics , mathematics , quantum mechanics , nanotechnology , materials science , statistics , layer (electronics)

We present a new approach to the simulation of ultra-small semiconductor devices based onBrownian motion of the carriers described by the Langevin equation. It follows the trajectoriesof individual particles in real space but does not require the computational effort of a fullMonte Carlo simulation. This method is particulary useful for modeling very small deviceswhere individual impurities and carries must be considered as discrete entities, and where amolecular dynamics approach is used in a full-scale three-dimensional simulation. We showthat this method gives the correct Maxwell-Boltzmann distribution and that it provides a gooddescription of transport through a short diode

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