N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy | Zendy

H. C. Chen | Zendy

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N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy

Author(s) -

H. C. Chen

Publication year - 1998

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1998/48934

Subject(s) - materials science , analytical chemistry (journal) , chemistry , chromatography

N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop ofpotential barrier lowering resulted from the forward biased pn junction is demonstrated in aAlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with ahigh voltage control efficiency ηv(=Vs/VH) of 6.7 have been obtained when the device isoperated in the dark. Typical OFF- and ON-state resistances are 150KΩ and 10Ω respectively.A lasing threshold current density, front slope efficiency, and external differentialquantum efficiency measured in as-cleaved device are 183A/cm2, 0.4mW/mA, and 31%,respectively. The peak emission wavelength is centered at about 980nm

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