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Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-statehigh-longitudinal field transport regimes have been described in detail. Electronvelocity-overshoot effects are studied in deep-submicron strained-Si MOSFETs, wherethey show an improvement over the performance of their normal silicon counterparts.The impact of the Si layer strain on the performance enhancement are described indepth in terms of microscopic magnitudes

Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures

Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si_{1 – x}Ge_x Heterostructures