Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures | Zendy

F. Gámiz | Zendy; J.B. Roldán | Zendy; J. A. LópezVillanueva | Zendy

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Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si_{1 – x}Ge_x Heterostructures

Author(s) -

F. Gámiz,

J.B. Roldán,

J. A. LópezVillanueva

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/48528

Subject(s) - velocity overshoot , monte carlo method , materials science , heterojunction , condensed matter physics , silicon , mosfet , electron , overshoot (microwave communication) , computational physics , optoelectronics , physics , transistor , electrical engineering , engineering , mathematics , quantum mechanics , statistics , voltage

Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-statehigh-longitudinal field transport regimes have been described in detail. Electronvelocity-overshoot effects are studied in deep-submicron strained-Si MOSFETs, wherethey show an improvement over the performance of their normal silicon counterparts.The impact of the Si layer strain on the performance enhancement are described indepth in terms of microscopic magnitudes

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