A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures | Zendy

M. Rashed | Zendy; W.-K. Shih | Zendy; S. Jallepalli | Zendy; R.J. Zaman | Zendy; Thomas J. T. Kwan | Zendy; C.M. Maziar | Zendy

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A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

Author(s) -

M. Rashed,

W.-K. Shih,

S. Jallepalli,

R.J. Zaman,

Thomas J. T. Kwan,

C.M. Maziar

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/45289

Subject(s) - nmos logic , monte carlo method , materials science , heterojunction , silicon , electron , electron mobility , silicon germanium , saturation (graph theory) , germanium , strained silicon , condensed matter physics , computational physics , optoelectronics , physics , crystalline silicon , electrical engineering , transistor , engineering , voltage , statistics , mathematics , quantum mechanics , combinatorics , amorphous silicon

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigatedusing a Monte Carlo (MC) simulation tool. The study includes both electron transportin bulk materials and in nMOS structures. The bulk MC simulator is based on a multibandanalytical model, “fitted bands”, representing the features of a realistic energy bandstructure.The investigation includes the study of low- and high-field electron transport characteristicsat 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOSstructure at room temperature. Both calculations show saturation of mobility enhancement instrained silicon beyond germanium mole fraction of 0.2

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