Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers | Zendy

M. Grado-Caffaro | Zendy

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Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers

Author(s) -

M. Grado-Caffaro

Publication year - 1998

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1998/45270

Subject(s) - quantum tunnelling , microcontroller , oxide , gate voltage , electric field , optoelectronics , voltage , electrical engineering , materials science , current (fluid) , current density , low voltage , power (physics) , gate oxide , engineering physics , engineering , physics , transistor , thermodynamics , quantum mechanics , metallurgy

The loss power density associated with the tunneling current in a typical MOS cell with afloating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore,problems related to oxide thickness are discussed

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