Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices
Author(s) -
Jian-Hung Lin,
David Z. Ting
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/42893
Subject(s) - superlattice , condensed matter physics , thermoelectric materials , dimensionless quantity , materials science , thermoelectric effect , figure of merit , work (physics) , optoelectronics , engineering physics , physics , quantum mechanics
In recent years, artificially layered microstructure have been considered as candidatesfor better thermoelectrics. In this work we examine transport properties of the type-IIbroken-gap InAs/GaSb superlattice. We use the effective bond orbital model for anaccurate description of the band structures. Theoretical results of thermoelectrictransport coefficients and the dimensionless figure of merit for an (8, 8)-InAs/GaSbtype-II superlattice are presented
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom