Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE | Zendy

Susanna Reggiani | Zendy; M.C. Vecchi | Zendy; M. Rudan | Zendy

Open Access

Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE

Author(s) -

Susanna Reggiani,

M.C. Vecchi,

M. Rudan

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/41638

Subject(s) - spherical harmonics , harmonics , silicon , valence band , scattering , computational physics , range (aeronautics) , electron , materials science , physics , condensed matter physics , optics , quantum mechanics , optoelectronics , voltage , composite material

By adopting the solution method for the BTE based on the spherical-harmonicsexpansion (SHE) [1], and using the full-band structure for both the electron and valenceband of silicon [2], the temperature dependence of a number of scattering mechanismshas been modeled and implemented into the code HARM performing the SHE solution.Comparisons with the experimental mobility data show agreement over a wide range oftemperatures. The analysis points out a number of factors from which the difficultiesencountered in earlier investigations seemingly originate, particularly in the case of holemobility

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