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By adopting the solution method for the BTE based on the spherical-harmonicsexpansion (SHE) [1], and using the full-band structure for both the electron and valenceband of silicon [2], the temperature dependence of a number of scattering mechanismshas been modeled and implemented into the code HARM performing the SHE solution.Comparisons with the experimental mobility data show agreement over a wide range oftemperatures. The analysis points out a number of factors from which the difficultiesencountered in earlier investigations seemingly originate, particularly in the case of holemobility

Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE