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Employing a recently developed efficient cellular automaton technique for solvingBoltzmann’s transport equation for realistic devices, we present a detailed study of thecarrier dynamics in GaAs avalanche p-i-n (IMPATT) diodes. We find that the impactionization in reverse bias p-i-n diodes with ultrathin (less than 50 nm) intrinsic regions istriggered by Zener tunneling rather than by thermal generation. The impact generationof hot carriers occurs mainly in the low-field junction regions rather than in the highfield intrinsic zone. The calculations predict significantly more minority carriers on then-side than on the p-side

Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes