Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes | Zendy

G. Zandler | Zendy; R. Oberhuber | Zendy; D. Liebig | Zendy; P. Vogl | Zendy; Marco Saraniti | Zendy; P. Lugli | Zendy

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Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes

Author(s) -

G. Zandler,

R. Oberhuber,

D. Liebig,

P. Vogl,

Marco Saraniti,

P. Lugli

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/39048

Subject(s) - diode , zener diode , cellular automaton , quantum tunnelling , avalanche breakdown , optoelectronics , impact ionization , single photon avalanche diode , thermal , materials science , avalanche diode , physics , boltzmann equation , ionization , computational physics , breakdown voltage , avalanche photodiode , computer science , voltage , quantum mechanics , optics , algorithm , ion , detector , resistor , meteorology

Employing a recently developed efficient cellular automaton technique for solvingBoltzmann’s transport equation for realistic devices, we present a detailed study of thecarrier dynamics in GaAs avalanche p-i-n (IMPATT) diodes. We find that the impactionization in reverse bias p-i-n diodes with ultrathin (less than 50 nm) intrinsic regions istriggered by Zener tunneling rather than by thermal generation. The impact generationof hot carriers occurs mainly in the low-field junction regions rather than in the highfield intrinsic zone. The calculations predict significantly more minority carriers on then-side than on the p-side

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