Four Level Simulation of MOSFET | Zendy

M. N. Doja | Zendy; Moinuddin Moinuddin | Zendy; Umesh Kumar | Zendy

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Four Level Simulation of MOSFET

Author(s) -

M. N. Doja,

Moinuddin Moinuddin,

Umesh Kumar

Publication year - 1998

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1998/38280

Subject(s) - mosfet , channel (broadcasting) , subthreshold conduction , software , degradation (telecommunications) , mobility model , subthreshold slope , computer science , electronic engineering , simulation software , engineering , electrical engineering , simulation , transistor , computer network , operating system , voltage

In this paper a software (MOSOFT) has been developed for 4-level simulation ofMOSFETS. This software simulates the device characteristics up to micron channellength and includes long channel, short channel, subthreshold and field dependentmobility degradation models

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