Quantum Kinetic Transport under High Electric Fields
Author(s) -
Nobuyuki Sano,
Akira Yoshii
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/38125
Subject(s) - electric field , kinetic energy , quantum , electron , physics , condensed matter physics , field (mathematics) , computational physics , quantum mechanics , mathematics , pure mathematics
Quantum kinetic transport under high electric fields is investigated with emphasis on theintracollisional field effect (ICFE) in low-dimensional structures. It is shown that the ICFE inGaAs one-dimensional quantum wires is already significant under moderate electric fieldstrengths (≥ a few hundreds V/cm). This is a marked contrast to the cases in bulk, where theICFE is expected to be significant under extremely strong electric fields (≥ MV/cm). Employingthe Monte Carlo method including the ICFE, the electron drift velocity in quantum wiresis shown to be much smaller than that expected from earlier investigations
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