A New HEMT Breakdown Model IncorporatingGate and Thermal Effects | Zendy

Lutfi Albasha | Zendy; C.M. Snowden | Zendy; R.D. Pollard | Zendy

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A New HEMT Breakdown Model IncorporatingGate and Thermal Effects

Author(s) -

Lutfi Albasha,

C.M. Snowden,

R.D. Pollard

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/37965

Subject(s) - high electron mobility transistor , quantum tunnelling , thermal , electronic engineering , materials science , channel (broadcasting) , work (physics) , optoelectronics , engineering , engineering physics , computer science , electrical engineering , mechanical engineering , transistor , physics , voltage , meteorology

This paper presents a comprehensive physical model for the breakdown process in HEMTs. The model is integrated into in a fast quasi-two-dimensional HEMT physical simulator. The work is based on a full study of the complex interactions between the different breakdown mechanisms and the influence of design parameters. The model takes account of tunnelling effects in the region of the gate metallization, and of the thermal effects in the active channel under the gate region.

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