Transient Phenomena in High Speed Bipolar Devices | Zendy

M.S. Obrecht | Zendy; E.L. Heasell | Zendy; J. Vlach | Zendy; M.I. Elmasry | Zendy

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Transient Phenomena in High Speed Bipolar Devices

Author(s) -

M.S. Obrecht,

E.L. Heasell,

J. Vlach,

M.I. Elmasry

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/35648

Subject(s) - bipolar junction transistor , transient (computer programming) , common emitter , materials science , transient analysis , base (topology) , computational physics , electrical engineering , optoelectronics , electronic engineering , voltage , mechanics , computer science , transistor , physics , engineering , transient response , mathematics , mathematical analysis , operating system

A new numerical method is applied to the analysis of the charge partitioning in thequasi-neutral base of a BJT. The results show that the conventional, 1:2 collector/emitter partitioning is not valid in general. High level injection increases the collectorfraction, whilst fast switching decreases it

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