Open AccessAn Analytical Study on the Local Electronic Density of States of the Valence Bands in Amorphous Silicon Carbide
Author(s) -
M. Grado-Caffaro
Publication year - 1998
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1998/34707
Subject(s) - silicon carbide , valence (chemistry) , amorphous solid , amorphous silicon , density of states , valence band , carbide , materials science , engineering physics , silicon , condensed matter physics , atomic physics , chemistry , optoelectronics , physics , crystallography , band gap , metallurgy , crystalline silicon , quantum mechanics
A formulation for the energy-averaged local valence band density of states ofamorphous silicon carbide is derived. To this end, sp3-type hybrid orbitals are employed
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