RF Performance of Si/SiGe MODFETs: A Simulation Study | Zendy

S. Roy | Zendy; A. Asenov | Zendy; S. Babiker | Zendy; John R. Barker | Zendy; S. P. Beaumont | Zendy

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RF Performance of Si/SiGe MODFETs: A Simulation Study

Author(s) -

S. Roy,

A. Asenov,

S. Babiker,

John R. Barker,

S. P. Beaumont

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/29629

Subject(s) - velocity overshoot , high electron mobility transistor , optoelectronics , materials science , microwave , figure of merit , overshoot (microwave communication) , noise (video) , noise figure , contact resistance , monte carlo method , transistor , electronic engineering , electrical engineering , nanotechnology , physics , engineering , computer science , cmos , mathematics , quantum mechanics , amplifier , statistics , voltage , artificial intelligence , image (mathematics) , layer (electronics)

The microwave performance potential of Si/SiGe pseudomorphic MODFETs arestudied, in comparison to state of the art InGaAs pseudomorphic HEMTs. Both deviceshave equivalent structures corresponding to a physical HEMT used for calibration. Weuse an RF analysis technique based on transient Monte Carlo simulations to estimatethe intrinsic noise figures, the RF figures of merit fT and fmax, and the effect of contact and gate resistances. Both devices exhibit velocity overshoot below the gate region. It is shown that the difference in noise figures and fT values can be mainly attributed todifferences in device channel velocity, fmax exhibits a strong dependence on devicecontact resistance, eroding some of the performance advantage of the pseudomorphicHEMT

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