Hydrodynamic Device Modeling with Band Nonparabolicity | Zendy

Jianwang Cai | Zendy; HongLiang Cui | Zendy; Erik H. Lenzing | Zendy; R. Pastore | Zendy; David L. Rhodes | Zendy; Barry Perlman | Zendy

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Hydrodynamic Device Modeling with Band Nonparabolicity

Author(s) -

Jianwang Cai,

HongLiang Cui,

Erik H. Lenzing,

R. Pastore,

David L. Rhodes,

Barry Perlman

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/28708

Subject(s) - momentum (technical analysis) , semiconductor , energy–momentum relation , set (abstract data type) , energy balance , energy (signal processing) , balance equation , relaxation (psychology) , physics , balance (ability) , quantum , electronic band structure , statistical physics , mechanics , condensed matter physics , mathematics , quantum mechanics , computer science , thermodynamics , medicine , psychology , social psychology , statistics , markov model , finance , markov chain , economics , physical medicine and rehabilitation , programming language

A semiconductor device model based on a set of quantum mechanically derived hydrodynamicbalance equations are presented. This model takes full account of band nonparabolicity,in addition to its other useful features such as the explicit evaluation of momentum andenergy relaxation rates, in the form of frictional force and energy loss rate, within the model,and inclusion of carrier-carrier interaction effects, such as dynamical screening. Numericalresults of one-dimensional device simulations are presented and compared with parabolicapproximations

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