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Plasma Process Modeling for Integrated Circuits Manufacturing
Author(s) -
M. Meyyappan,
T. R. Govindan
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/27636
Subject(s) - plasma , etching (microfabrication) , flux (metallurgy) , materials science , process (computing) , deposition (geology) , plasma etching , ion , cad , integrated circuit , computer science , nuclear engineering , nanotechnology , optoelectronics , engineering , engineering drawing , chemistry , physics , nuclear physics , metallurgy , layer (electronics) , geology , paleontology , organic chemistry , sediment , operating system
A reactor model for plasma-based deposition and etching is presented. Two-dimensionalresults are discussed in terms of plasma density, ion flux, and ion energy. Approaches todevelop rapid CAD-type models are discussed

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