Modeling of Shot Noise in Resonant Tunneling Structures
Author(s) -
Giuseppe Iannaccone,
Massimo Macucci,
B. Pellegrini
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/27313
Subject(s) - quantum tunnelling , shot noise , noise (video) , stress (linguistics) , quantum , physics , computer science , electronic engineering , optoelectronics , materials science , engineering , quantum mechanics , optics , artificial intelligence , linguistics , philosophy , detector , image (mathematics)
In this paper, we present insights into the transport properties and the geometricalstructure of resonant tunneling devices that can be obtained by the study of their noiseproperties. We stress the importance of including noise behavior among the objectivesof device simulations. The reason is twofold: on one hand, as the number of carriersinvolved in device operation decreases, fluctuations become more relevant; on the otherhand, in devices whose functionality is based on quantum effects, noise propertiesstrongly depend on the details of device geometry
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