Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation | Zendy

Andreas Greiner | Zendy; L. Varani | Zendy; L. Reggiani | Zendy; M.C. Vecchi | Zendy; T. Kühn | Zendy; P. Golinelli | Zendy

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Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation

Author(s) -

Andreas Greiner,

L. Varani,

L. Reggiani,

M.C. Vecchi,

T. Kühn,

P. Golinelli

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/27140

Subject(s) - degenerate energy levels , semiconductor , formalism (music) , monte carlo method , statistical physics , thermal conductivity , charge carrier , silicon , kinetic energy , thermal , materials science , semiconductor device , computational physics , condensed matter physics , physics , nanotechnology , classical mechanics , quantum mechanics , optoelectronics , thermodynamics , mathematics , art , musical , statistics , layer (electronics) , visual arts

Within a correlation-function (CF) formalism, the kinetic coefficientsof charge carriers in semiconductors are studied under different conditions. For the case of linear response in equilibrium, thetransitions from the non-degenerate to the degenerate regimes as wellas from ballistic to diffusive conditions are discussed within ananalytical model. Generalizing the method to high-field transport innondegenerate semiconductors, the CFs are determined by Monte Carlo (MC) calculations for bulk silicon from which the appropriate thermalconductivity has beenobtained and included into the hydrodynamic code HEIELDS. For an n+nn+ submicron structure the temperatureand velocity profiles of the carriers have been calculated with HFIELDS

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