One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects | Zendy

Rimon Ikeno | Zendy; Hiroshi Itô | Zendy; Kunihiro Asada | Zendy

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One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects

Author(s) -

Rimon Ikeno,

Hiroshi Itô,

Kunihiro Asada

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/23890

Subject(s) - silicon on insulator , subthreshold conduction , mosfet , poisson's equation , poisson distribution , inversion (geology) , subthreshold slope , quantum , quantum dot , materials science , physics , statistical physics , electronic engineering , optoelectronics , mathematics , transistor , quantum mechanics , silicon , engineering , statistics , voltage , paleontology , structural basin , biology

We have been studying on subthreshold characteristics of SOI MOSFETs in terms of substratebias dependence, using a 1-D Poisson equation on an SOI multi-layer structure for estimatingstructural parameters of real devices[1]. Here, we consider quantum mechanicaleffects in the electron inversion layer of thin SOI MOSFETs, implementing a self-consistentsolver of Poisson and Schrödinger equations in a 1-D subthreshold simulator. From results ofsimulations, we have concluded that quantum mechanical effects need to be considered inanalizing thin SOI devices

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