Interface Roughness Effects in Ultra-Thin Tunneling Oxides | Zendy

David Z. Ting | Zendy; Erik S. Daniel | Zendy; T. C. McGill | Zendy

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Interface Roughness Effects in Ultra-Thin Tunneling Oxides

Author(s) -

David Z. Ting,

Erik S. Daniel,

T. C. McGill

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/23567

Subject(s) - supercell , quantum tunnelling , materials science , silicon , surface finish , scanning tunneling microscope , planar , scattering , oxide , surface roughness , interface (matter) , stack (abstract data type) , condensed matter physics , nanotechnology , optoelectronics , optics , metallurgy , composite material , computer science , physics , telecommunications , radar , computer graphics (images) , capillary number , capillary action , programming language

Advanced MOSFET for ULSI and novel silicon-based devices require the use of ultrathintunneling oxides where non-uniformity is often present. We report on ourtheoretical study of how tunneling properties of ultra-thin oxides are affected byroughness at the silicon/oxide interface. The effect of rough interfacial topography isaccounted for by using the Planar Supercell Stack Method (PSSM) which can accuratelyand efficiently compute scattering properties of 3D supercell structures. Our resultsindicate that while interface roughness effects can be substantial in the direct tunnelingregime, they are less important in the Fowler-Nordheim regime

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