Open AccessAnalysis and Simulation of Extended HydrodynamicModels: The Multi‐Valley Gunn Oscillatorand MESFET Symmetries
Author(s) -
GuiQiang Chen,
Joseph W. Jerome,
ChiWang Shu
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/21818
Subject(s) - mesfet , homogeneous space , electronic engineering , physics , computer science , electrical engineering , engineering , mathematics , voltage , geometry , transistor , field effect transistor
We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensionalgeometric effects into a one dimensional model. We study (1) the GaAs device in thenotched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present newmathematical results for a reduced model
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