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As semiconductor technology continues to evolve, numerical modeling of semiconductordevices becomes an indispensible tool for the prediction of device characteristics.The simple drift-diffusion model is still widely used, especially in the study of subthresholdbehavior in MOSFETs. The numerical solution of these two equations offersdifficulties in small devices and special methods are required for the case when dealingwith 3D problems that demand large CPU times. In this work we investigate theconvergence properties of the Bi-CGSTAB method. We find that this method showssuperior convergence properties when compared to more commonly used ILU and SIPmethods

Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs