Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs | Zendy

Dragica Vasileska | Zendy; Warren J. Gross | Zendy; Venceslav Kafedziski | Zendy; D. K. Ferry | Zendy

Open Access

Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs

Author(s) -

Dragica Vasileska,

Warren J. Gross,

Venceslav Kafedziski,

D. K. Ferry

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/21494

Subject(s) - convergence (economics) , semiconductor device , subthreshold conduction , poisson's equation , mosfet , semiconductor , computer science , poisson distribution , diffusion , mathematics , statistical physics , electronic engineering , algorithm , transistor , materials science , electrical engineering , physics , mathematical analysis , engineering , nanotechnology , quantum mechanics , statistics , layer (electronics) , voltage , economic growth , economics

As semiconductor technology continues to evolve, numerical modeling of semiconductordevices becomes an indispensible tool for the prediction of device characteristics.The simple drift-diffusion model is still widely used, especially in the study of subthresholdbehavior in MOSFETs. The numerical solution of these two equations offersdifficulties in small devices and special methods are required for the case when dealingwith 3D problems that demand large CPU times. In this work we investigate theconvergence properties of the Bi-CGSTAB method. We find that this method showssuperior convergence properties when compared to more commonly used ILU and SIPmethods

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