3-D Device Simulation Using Intelligent Solution Method Control
Author(s) -
Daniel C. Kerr,
I.D. Mayergoyz
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/18156
Subject(s) - newton's method , convergence (economics) , computer science , local convergence , control (management) , mathematical optimization , algorithm , iterative method , control theory (sociology) , mathematics , nonlinear system , artificial intelligence , physics , quantum mechanics , economics , economic growth
In this paper, a hybrid solution method is implemented for solving the semiconductor transportequations. The hybrid “local Newton” method consists of a combination of the fixedpointiteration (FPI) and Newton’s methods. The FPI technique is nearly ideally suited tosolving large, 3-D systems of semiconductor equations on machines of limited computermemory ; however, it has certain limitations. This motivates the local Newton method, whichcoordinates the use of both the FPI and Newton’s methods, for convergence faster than eithermethod alone
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