Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN2O3Polycrystalline Ceramics | Zendy

Corinne Marcel | Zendy; J. Salardenne | Zendy; S. Y. Huang | Zendy; G. Campet | Zendy; J. Portier | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN₂O₃Polycrystalline Ceramics

Author(s) -

Corinne Marcel,

J. Salardenne,

S. Y. Huang,

G. Campet,

J. Portier

Publication year - 1996

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1997/89056

Subject(s) - seebeck coefficient , dopant , doping , hall effect , crystallite , materials science , thermoelectric effect , electrical resistivity and conductivity , ceramic , condensed matter physics , electron mobility , scattering , analytical chemistry (journal) , conductivity , metal , carrier scattering , germanium , chemistry , optoelectronics , electrical engineering , metallurgy , silicon , thermal conductivity , physics , composite material , thermodynamics , optics , engineering , chromatography

The thermoelectric power and Hall effect of Sn-or Ge-doped In2O3 ceramics are investigated based ona comparative study. The metal-type conductivity in both the samples occurs when the carrierconcentration exceeds ~1019 cm-3. The carrier mobility is found to be higher for Ge-doped samples.The relation between the <> of the dopant element and its scattering cross sectionis also presented

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research