A Mathematical Formulation for Diamagnetism in Tetrahedrally Bonded Semiconductors | Zendy

M. Grado-Caffaro | Zendy

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A Mathematical Formulation for Diamagnetism in Tetrahedrally Bonded Semiconductors

Author(s) -

M. Grado-Caffaro

Publication year - 1996

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1997/58249

Subject(s) - diamagnetism , semiconductor , condensed matter physics , amorphous solid , tensor (intrinsic definition) , amorphous semiconductors , state (computer science) , magnetic semiconductor , materials science , chemistry , physics , crystallography , mathematics , magnetic field , quantum mechanics , pure mathematics , algorithm

An expression for the magnetic susceptibility tensor corresponding to diamagnetic contribution intetrahedrally bonded semiconductors is derived; this formulation refers to the crystalline state. Inaddition, a comparison with the amorphous case is outlined

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