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The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrierlifetime (τ) and the back surface recombination velocity (S) of silicon solar cells has been investigatedat constant illumination level. The validity of the method has been discussed through a simulation studyby considering the mathematical solution of the continuity equation. Extracted values of τ and S arecompared to their input values in order to evaluate the performances of our method and the precisionwith regard to cell structural parameters, namely the base width and the base doping level. Deviationsin lifetime values remain lower than 7% for almost all the cell configurations while recombinationvelocity deviations are shown to be dependent on cell structure parameters and experimental procedure

active and passive electronic components

Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity