Open AccessAnalysis and Modeling of Depletion-Mode MOS Transistors
Author(s) -
Umesh Kumar
Publication year - 1995
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1996/60657
Subject(s) - transconductance , mosfet , electronic engineering , power semiconductor device , transistor , very large scale integration , mode (computer interface) , electrical engineering , computer science , power (physics) , materials science , optoelectronics , voltage , engineering , physics , quantum mechanics , operating system
Depletion mode MOSFETs are widely used in MOS—LSI/VLSI circuits as load elements. The main advantages offered by these devices are:
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