Electron Transport Using the Quantum Corrected Hydrodynamic Equations | Zendy

J. P. Kreskovsky | Zendy; H. L. Grubin | Zendy

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Electron Transport Using the Quantum Corrected Hydrodynamic Equations

Author(s) -

J. P. Kreskovsky,

H. L. Grubin

Publication year - 1995

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1995/97025

Subject(s) - quantum , simple (philosophy) , set (abstract data type) , statistical physics , physics , high electron mobility transistor , electron , quantum mechanics , classical mechanics , computer science , transistor , philosophy , epistemology , voltage , programming language

Transport in one- and two-dimensional semiconductor device structures is considered using a set of quantum corrected hydrodynamic equations. Simple one-dimensional simulations demonstrate the need to include quantum effects in structures with sharp interfaces. Application to a two-dimensional quantum well HEMT structure is then considered. A brief discussion of the computational procedure is also presented.

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