Open AccessDielectric Anisotropy in Partially Grain-Oriented Bi2VO5.5Ceramics
Author(s) -
K. V. R. Prasad,
K. B. R. Varma
Publication year - 1995
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1995/85454
Subject(s) - materials science , dielectric , ceramic , crystallite , quenching (fluorescence) , curie temperature , scanning electron microscope , anisotropy , annealing (glass) , ferroelectricity , hysteresis , ferroelectric ceramics , composite material , condensed matter physics , microstructure , analytical chemistry (journal) , mineralogy , metallurgy , optics , optoelectronics , ferromagnetism , chemistry , physics , chromatography , fluorescence
Ceramics obtained from quenching melts of prereacted polycrystalline Bi2V5.5 exhibit grain orientation(~ 55%). Microstructural studies carried out using scanning electron microscopy (SEM) on subsequentlyannealed ceramics show ferroelectric domains. These post-annealed ceramics possess dielectricanisotropies of about 1:1.2 at 300 K and 1:4.3 in the vicinity of the Curie temperature (~ 730 K)between the directions parallel and perpendicular to the quenching direction. The dielectric constantsof the samples, obtained by quenching the melts, are higher than that of the post-annealed ceramics.Electrically poled and thermally cycled samples of both as-quenched and post-annealed exhibitferroelectric hysteresis loops at 300 K
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