Magnetic Susceptibility of Tetrahedrally Bonded Amorphous Semiconductors | Zendy

M. A. Grado Caffaro | Zendy; M. Grado Caffaro | Zendy

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Magnetic Susceptibility of Tetrahedrally Bonded Amorphous Semiconductors

Author(s) -

M. A. Grado Caffaro,

M. Grado Caffaro

Publication year - 1994

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1995/58945

Subject(s) - diamagnetism , paramagnetism , condensed matter physics , amorphous solid , tetrahedron , semiconductor , amorphous semiconductors , electron paramagnetic resonance , magnetic susceptibility , silicon , materials science , amorphous silicon , physics , nuclear magnetic resonance , chemistry , crystallography , magnetic field , quantum mechanics , crystalline silicon , metallurgy , optoelectronics

A special theoretical formulation on the magnetic susceptibility of tetrahedral amorphous semiconductorsis proposed. This formulation is based upon a Wannier representation involving two terms: a diamagneticterm and a paramagnetic contribution. In addition, electron-spin resonance referred to amorphous siliconis considered

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