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The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) modelfor semiconductor devices. Simulations of a parabolic well resonant tunneling diode at 77 K are presented whichshow multiple regions of negative differential resistance (NDR) in the current-voltage curve. These are the firstsimulations of the QHD equations to show multiple regions of NDR

Resonant Tunneling in the Quantum Hydrodynamic Model