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CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapordeposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources.The CdTe epilayers grown between 365°C and 380°C possess the best surface morphology. DETe is usedas the controlling species of this growth system. Typical growth rates are varied from 2.51µm/hr to5.31µm/hr. Low-temperature (12K) photoluminscence (PL) measurements reveal that 380°C is the bestgrowth temperature and the full width at half maximum (FWHM) of the dominated peak is about1.583eV by the bound-exciton emission of 9.38meV. The double crystal X-ray rocking curves (DCRC)indicate that the FWHM decreases while increasing the epilayer thickness and approaches a stable valueabout 80 arc sec under the growth rate of 5.2µm/hr, the growth temperature of 380°C and theDETe/DMCd concentration ratio of 1.7. The value of 80 arc sec in FWHM is the smallest one everreported to date

Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates