Open AccessCharacteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates
Author(s) -
P. W. Sze,
K. F. Yarn,
Y. H. Wang,
MauPhon Houng,
G. L. Chen
Publication year - 1995
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1995/16596
Subject(s) - full width at half maximum , metalorganic vapour phase epitaxy , epitaxy , substrate (aquarium) , analytical chemistry (journal) , cadmium telluride photovoltaics , chemical vapor deposition , materials science , chemistry , optoelectronics , nanotechnology , chromatography , biology , ecology , layer (electronics)
CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapordeposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources.The CdTe epilayers grown between 365°C and 380°C possess the best surface morphology. DETe is usedas the controlling species of this growth system. Typical growth rates are varied from 2.51µm/hr to5.31µm/hr. Low-temperature (12K) photoluminscence (PL) measurements reveal that 380°C is the bestgrowth temperature and the full width at half maximum (FWHM) of the dominated peak is about1.583eV by the bound-exciton emission of 9.38meV. The double crystal X-ray rocking curves (DCRC)indicate that the FWHM decreases while increasing the epilayer thickness and approaches a stable valueabout 80 arc sec under the growth rate of 5.2µm/hr, the growth temperature of 380°C and theDETe/DMCd concentration ratio of 1.7. The value of 80 arc sec in FWHM is the smallest one everreported to date
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