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In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistorare presented. The device has been characterized in terms of noise and scattering parameters by meansof an original automatic noise figure measuring system only. Measurements have been performed overthe 1–4 GHz frequency range and at different bias conditions. The extracted model refers to theperformance of the chip device since the package and bond parasitics have been accurately de-embeddedby proper calibration techniques

Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors