Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors | Zendy

Alina Caddemi | Zendy; M. Sannino | Zendy

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Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors

Author(s) -

Alina Caddemi,

M. Sannino

Publication year - 1994

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1994/38702

Subject(s) - bipolar junction transistor , materials science , optoelectronics , noise (video) , signal (programming language) , transistor , electronic engineering , electrical engineering , computer science , voltage , engineering , artificial intelligence , image (mathematics) , programming language

In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistorare presented. The device has been characterized in terms of noise and scattering parameters by meansof an original automatic noise figure measuring system only. Measurements have been performed overthe 1–4 GHz frequency range and at different bias conditions. The extracted model refers to theperformance of the chip device since the package and bond parasitics have been accurately de-embeddedby proper calibration techniques

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