Resolution Enhancement in IDDQ Testing for Large ICs
Author(s) -
Yashwant K. Malaiya,
Anura P. Jayasumana,
C.Q. Tong,
S.M. Me
Publication year - 1994
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1994/27973
Subject(s) - iddq testing , cmos , very large scale integration , integrated circuit , electronic engineering , reliability engineering , power (physics) , computer science , engineering , electrical engineering , physics , quantum mechanics
Current drawn by a static CMOS VLSI integrated circuit during quiescent periods is extremely small and isnormally of the order of nanoamperes. However, it is remarkably susceptible to a number of failure modes. Manyfaults present in such ICs cause the quiescent power-supply current (IDDQ) to increase by several orders ofmagnitude. Some of these faults may not manifest themselves as logical faults, and would not be detected bytraditional IC test techniques
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