Open AccessNew Results on the Noise Figure of HEMTs
Author(s) -
M. A. Grado Caffaro,
M. Grado Caffaro
Publication year - 1993
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1993/74525
Subject(s) - noise (video) , noise figure , transistor , differential (mechanical device) , electronic engineering , high electron mobility transistor , computer science , order (exchange) , mathematics , electrical engineering , telecommunications , physics , engineering , amplifier , artificial intelligence , thermodynamics , bandwidth (computing) , finance , voltage , economics , image (mathematics)
In this communication, an accurate mathematical model for the noise figure of a high electron mobilitytransistor is developed. This model represents a substantial improvement of the Fukui model. In fact,the Fukui approach can be considered as an approximation of our model under certain conditions.The fundamental relationship that gives minimum noise figure is derived from a first-order linearpartial differential equation, which is established by assuming reasonable statements based on experience
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