Plasma-Optical Effect in GaAs PIN Photodiodes | Zendy

M. A. Grado Caffaro | Zendy; M. Grado Caffaro | Zendy

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Plasma-Optical Effect in GaAs PIN Photodiodes

Author(s) -

M. A. Grado Caffaro,

M. Grado Caffaro

Publication year - 1992

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1993/56352

Subject(s) - photodiode , optoelectronics , materials science , plasma , gallium arsenide , optics , physics , quantum mechanics

This paper is devoted to the analysis of the Plasma-Optical Effect in GaAs PIN photodiodes operatingat the infrared range. An approximated expression for the variation of the refractive index in theintrinsic zone of a AsGa PIN photodiode is obtained. This variation is induced by the charge of thedevice. The approach developed by us is in a good agreement with experimental works. Moreover, anapplication concerning high-frequency ICs is outlined

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