Open AccessEffect of the Addition of Different Metal Oxides in Lead Borosilicate Glasses on the Electrical Characteristics of SbSn Composition-Based Thick-Film Resistors
Author(s) -
E. R. Cubellio,
G. N. Natu,
R.N. Karekar,
R. C. Aiyer
Publication year - 1993
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1993/28148
Subject(s) - borosilicate glass , materials science , oxide , electrical resistivity and conductivity , amorphous solid , metallurgy , resistor , composite material , mineralogy , chemistry , physics , quantum mechanics , voltage , electrical engineering , engineering , organic chemistry
The paper reports the effect of addition of metal oxides in lead borosilicate glasses on electrical characteristics of SbSn alloy-based thick-film resistors. The Sb and Sn powder (1: 1 by weight) is taken in two quartz tubes separately, vacuum sealed at 10–5 Torr and heated in a resistive furnace .at 430℃ and 630℃ respectively. The conventional glass [1] is modified by using different dopants like tungsten oxide, cobalt oxide, lithium oxide, titanium dioxide, venadium pentoxide, chromium oxide, nickel oxide and manganese dioxide. The resistive pastes are formulated with both powders, 5% glass and conventional organic binder. The firing temperature is optimized for eight glasses. The sheet resistivity varies from 1600 Ω/□ to 40 Ω/□ , with negative temperature co-efficient of resistance varying from 2000 ppm/℃ to 800 ppm/℃ respectively. Material characterization is carried out using the XRD technique. Aging studies of resistors at room temperature over the period of two months indicate that these resistors stabilize within 15–20 days
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom