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The paper reports the effect of addition of metal oxides in lead borosilicate glasses on electrical characteristics of SbSn alloy-based thick-film resistors. The Sb and Sn powder (1: 1 by weight) is taken in two quartz tubes separately, vacuum sealed at 10–5 Torr and heated in a resistive furnace .at 430℃ and 630℃ respectively. The conventional glass [1] is modified by using different dopants like tungsten oxide, cobalt oxide, lithium oxide, titanium dioxide, venadium pentoxide, chromium oxide, nickel oxide and manganese dioxide. The resistive pastes are formulated with both powders, 5% glass and conventional organic binder. The firing temperature is optimized for eight glasses. The sheet resistivity varies from 1600 Ω/□ to 40 Ω/□ , with negative temperature co-efficient of resistance varying from 2000 ppm/℃ to 800 ppm/℃ respectively. Material characterization is carried out using the XRD technique. Aging studies of resistors at room temperature over the period of two months indicate that these resistors stabilize within 15–20 days

active and passive electronic components

Effect of the Addition of Different Metal Oxides in Lead Borosilicate Glasses on the Electrical Characteristics of SbSn Composition-Based Thick-Film Resistors