Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide | Zendy

Shijie Wen | Zendy; G. Campet | Zendy; J. Portier | Zendy

Open Access

Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide

Author(s) -

Shijie Wen,

G. Campet,

J. Portier

Publication year - 1991

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1992/56168

Subject(s) - indium , tin , indium tin oxide , doping , ceramic , materials science , oxygen , band diagram , oxide , oxygen pressure , thermal , inorganic chemistry , chemistry , nanotechnology , metallurgy , optoelectronics , layer (electronics) , band gap , thermodynamics , organic chemistry , physics

The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatmentsunder high and low oxygen pressure are discussed on the basis of the evolution of the band energydiagram. A critical concentration of “active oxygen vacancies” associated with donor centers is necessaryto achieve high electronic mobility in ITO (Indium Tin Oxide)

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