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The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatmentsunder high and low oxygen pressure are discussed on the basis of the evolution of the band energydiagram. A critical concentration of “active oxygen vacancies” associated with donor centers is necessaryto achieve high electronic mobility in ITO (Indium Tin Oxide)

active and passive electronic components

Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide