Improvement of Mosfet Characteristics
Author(s) -
Ranbir Singh
Publication year - 1990
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1990/78629
Subject(s) - mosfet , mode (computer interface) , dielectric , equivalent circuit , materials science , electronic engineering , electrical engineering , optoelectronics , engineering , computer science , voltage , transistor , operating system
By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integratedcircuit version are presented. Both for the enhancement mode and the depletion mode, equivalentcircuit models are developed. Also, the high frequency behaviour is explained by a model and thebehaviour of a T-MOSFET under different conditions is given
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