Realization of Solar Cells Based on Silicon/Oxide Junctions | Zendy

G. Campet | Zendy; Zhaoqi Sun | Zendy; P. Keou | Zendy

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Realization of Solar Cells Based on Silicon/Oxide Junctions

Author(s) -

G. Campet,

Zhaoqi Sun,

P. Keou

Publication year - 1990

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1990/31452

Subject(s) - realization (probability) , silicon , materials science , layer (electronics) , sputtering , optoelectronics , anode , oxide , electrical conductor , chemical engineering , nanotechnology , thin film , electrode , chemistry , composite material , metallurgy , statistics , mathematics , engineering

Transparent and conductive films of SrTiO3 , ITO, and Tl2O3 have been deposited by R.F. cathodic sputtering and by anodic oxidation onto Si substrates in order to realize SIS cells. A photoconversion efficiency of 8.8% has been obtained for Si/SiOx/Tl2O3 cells. On the other hand for Si/SiOx/SrTiO3(ITO) the photoconversion efficiency is lower than 1% because of the too large thickness of the SiOx interfacial layer

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