The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors | Zendy

Gy. Pásztor | Zendy; J. Berkecz | Zendy; N. M. Ficza | Zendy

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The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors

Author(s) -

Gy. Pásztor,

J. Berkecz,

N. M. Ficza

Publication year - 1988

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1989/43536

Subject(s) - silicon , atmospheric temperature range , materials science , diffusion , spreading resistance profiling , range (aeronautics) , temperature measurement , analytical chemistry (journal) , optoelectronics , chemistry , composite material , thermodynamics , physics , chromatography

The construction method of the sensor SRTS with two roundshaped diffusion layers is given.The effect of geometry on the sensor resistance is determined theoretically. An approximatingmethod is given to determine the temperature dependence of the sensor in the range of200K < T < 400K. Calculated results are compared to measurements

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