Open AccessA Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour
Author(s) -
Andrew Franklin,
E. A. Amerasekera,
David Campbell
Publication year - 1987
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1987/96107
Subject(s) - nmos logic , mesfet , optoelectronics , materials science , schottky barrier , electrostatic discharge , polarity (international relations) , electrical engineering , chemistry , engineering , voltage , transistor , field effect transistor , biochemistry , diode , cell
Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAsD-MESFETs and unprotected enhancement mode NMOS structures
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