Low Temperature Firing of Pb-Contained Thick Film Dielectrics
Author(s) -
ShenLi Fu,
Gung-Fun Chen
Publication year - 1987
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1987/69863
Subject(s) - materials science
The preparation and properties of the Pb(Fe2/3W1/3)x(Fe1/2Nb1/2)0.86–xTi0.14O3-based thick film dielectrics aredescribed. The Calcined Pb(Fe2/3W1/3)O3 powder, instead of glass frit, is used as the flux agent to promote densificationduring the firing process. Firing is conducted at temperatures below 1000℃. The dissolution of Pb(Fe2/3W1/3)O3 intothe starting material and the segregation of Pb(Fe2/3W1/3)O3 along the grain boundaries result in two peaks in thedielectric constant vs temperature behaviour. By controlling the amount of Pb(Fe2/3W1/3)O3 appropriately, thetemperature coefficient of capacitance may be improved. The average dielectric constant of the compositions preparedrange from 783 to 1639 1 at KHz. The loss factor can be reduced by adding small amounts of MnO2, and is below 2% at 1 KHz from –25℃ to +85℃. Microscopic observation and x-ray diffraction analysis have also been conducted toconfirm the mechanism deduced for explaining the results
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