The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions | Zendy

J. Kozłowski | Zendy; Marek Panek | Zendy; M. Ratuszek | Zendy; M. Tłaczała | Zendy

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The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions

Author(s) -

J. Kozłowski,

Marek Panek,

M. Ratuszek,

M. Tłaczała

Publication year - 1987

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1987/58065

Subject(s) - epitaxy , bismuth , microprobe , materials science , impurity , chromium , phase (matter) , deposition (geology) , analytical chemistry (journal) , gallium arsenide , crystal growth , optoelectronics , crystallography , mineralogy , chemistry , metallurgy , layer (electronics) , nanotechnology , chromatography , geology , paleontology , organic chemistry , sediment

X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts ofbismuth are presented. An equilibrium cooling and two phase technique for the deposition of the GaAsepitaxial layers on semi-insulating GaAs:Cr(100) substrates has been used

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