Open AccessAbout the Influence of SiO2on the Temperature Behaviour of Ruthenate Based Thick Film Resistors
Author(s) -
I. Storbeck,
Manfred Wolf
Publication year - 1987
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1987/41585
Subject(s) - resistor , activation energy , electrical resistivity and conductivity , generalization , materials science , thermodynamics , computer science , analytical chemistry (journal) , algorithm , chemistry , electrical engineering , physics , mathematics , mathematical analysis , chromatography , voltage , engineering
Substituting glass by SiO2 in thick film resistors results in a small increase of R□, a decrease of dR□/dT and anincrease of d2R□/dT2 (at room temperature). From these experimental results it follows that substituting glassby SiO2 leads to an increase in the resistance of the tunnel barrier, determining the resistivity of the TFRs. Theother microscopic quantities, like charging energy and HTCρ of ruthenate, are estimated using the model of Pikeand Seager, the generalization of Which (necessary in order to take into account the influence of the straindependence of R□ and R□ (T) in a correct way) is derived
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