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Substituting glass by SiO2 in thick film resistors results in a small increase of R□, a decrease of dR□/dT and anincrease of d2R□/dT2 (at room temperature). From these experimental results it follows that substituting glassby SiO2 leads to an increase in the resistance of the tunnel barrier, determining the resistivity of the TFRs. Theother microscopic quantities, like charging energy and HTCρ of ruthenate, are estimated using the model of Pikeand Seager, the generalization of Which (necessary in order to take into account the influence of the straindependence of R□ and R□ (T) in a correct way) is derived

About the Influence of SiO2on the Temperature Behaviour of Ruthenate Based Thick Film Resistors